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| Excelics DATA SHEET * * * * * * +20.0dBm TYPICAL OUTPUT POWER 11.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE EFA025AL High Gain GaAs Power FET 420 50 104 D D 48 260 40 S G G S 90 59 50 78 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA -12 -7 17.0 9.5 Chip Thickness: 75 13 microns All Dimensions In Microns MIN TYP 20.0 20.0 11.5 9.0 38 MAX UNIT dBm dB % 20 30 45 50 -1.5 -15 -14 155 65 mA mS -2.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss Idss Ids Forward Gate Current 6mA 1mA Igsf Input Power 19dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 880mW 730mW Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFA025AL DATA SHEET High Gain GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 --MAG ANG 0.990 -19.8 0.970 -38.4 0.927 -55.0 0.895 -69.0 0.862 -81.3 0.838 -91.8 0.815 -101.4 0.802 -110.2 0.779 -118.3 0.769 -125.4 0.765 -132.3 0.764 -139.0 0.769 -144.9 0.771 -150.5 0.779 -155.4 0.781 -159.8 0.786 -163.1 0.793 -166.7 0.794 -170.0 0.786 -173.1 0.773 -175.2 0.762 -177.7 0.763 -179.9 0.762 176.7 0.759 173.1 0.753 170.5 8V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 5.439 163.7 0.014 78.3 5.095 150.4 0.027 68.7 4.719 137.3 0.037 58.7 4.328 126.3 0.043 52.7 3.961 116.0 0.049 45.8 3.630 107.0 0.051 41.8 3.327 98.8 0.054 37.2 3.078 90.9 0.055 33.0 2.822 83.7 0.056 28.4 2.613 77.3 0.053 25.0 2.436 71.1 0.052 23.8 2.285 64.8 0.051 22.4 2.150 58.9 0.051 20.1 2.032 53.3 0.050 19.7 1.945 47.5 0.051 20.2 1.852 41.3 0.053 20.5 1.783 35.8 0.056 19.3 1.732 29.6 0.061 17.0 1.674 22.7 0.063 16.1 1.607 15.7 0.067 14.6 1.505 9.1 0.070 12.7 1.437 3.0 0.071 13.3 1.368 -2.4 0.076 16.5 1.305 -8.5 0.083 16.6 1.235 -14.3 0.088 16.8 1.168 -18.0 0.092 17.9 --- S22 --MAG ANG 0.787 -7.4 0.772 -14.1 0.751 -20.6 0.727 -26.3 0.709 -32.1 0.692 -37.1 0.681 -42.0 0.675 -46.6 0.663 -51.0 0.655 -54.8 0.651 -58.5 0.645 -62.0 0.636 -65.3 0.628 -69.1 0.619 -73.7 0.614 -79.6 0.593 -86.9 0.580 -95.4 0.577 -105.2 0.582 -116.6 0.590 -128.3 0.604 -138.3 0.637 -146.1 0.678 -153.2 0.703 -158.7 0.721 -161.8 The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each. |
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